Transistor performance in intense magnetic fields
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- Created Date
- 1969]
- Description
Prepared at Lewis Research Center.
"September 1969."
Cover title.
Includes bibliographical references (p. 6).
Performance tests of silicon and germanium transistors in intense magnetic fields.
- Creator
Hudson, Wayne R
- Partner
- HathiTrust
- Contributing Institution
- University of Illinois
- Publisher
- Washington, D.C. : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information
- Subjects
- Transistors--Reliability
Transistors--Materials--Electric properties
Magnetic fields
Transistors--Materials--Environmental testing - Type
- text
- Format
- Language materialElectronic resource
- Language
- English
- Rights
- Public domain. Learn more at http://www.hathitrust.org/access_use
- Chicago citation style
- Hudson, Wayne R. Transistor performance in intense magnetic fields. 1969]. Retrieved from the Digital Public Library of America, http://catalog.hathitrust.org/Record/011444333. (Accessed March 28, 2024.)
- APA citation style
- Hudson, Wayne R, (1969]) Transistor performance in intense magnetic fields. Retrieved from the Digital Public Library of America, http://catalog.hathitrust.org/Record/011444333
- MLA citation style
- Hudson, Wayne R. Retrieved from the Digital Public Library of America <http://catalog.hathitrust.org/Record/011444333>.