Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons
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- Created Date
- [1969]
- Description
Prepared at Langley Research Center.
"February 1969"--Cover.
Includes bibliographical references (p. 15-16).
- Creator
Beatty, Marvin E. (Marvin Eddleman), 1940
- Partner
- HathiTrust
- Contributing Institution
- University of Illinois
- Publisher
- Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information
- Subjects
- Semiconductors--Effect of radiation on
Extraterrestrial radiation
Gallium arsenide--Effect of radiation on
Silicon, Effect of radiation on - Type
- text
- Format
- Language materialElectronic resource
- Language
- English
- Rights
- Public domain. Learn more at http://www.hathitrust.org/access_use
- Chicago citation style
- Beatty, Marvin E. (Marvin Eddleman), 1940. Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons. [1969]. Retrieved from the Digital Public Library of America, http://catalog.hathitrust.org/Record/011444388. (Accessed March 29, 2024.)
- APA citation style
- Beatty, Marvin E. (Marvin Eddleman), 1940, ([1969]) Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons. Retrieved from the Digital Public Library of America, http://catalog.hathitrust.org/Record/011444388
- MLA citation style
- Beatty, Marvin E. (Marvin Eddleman), 1940. Retrieved from the Digital Public Library of America <http://catalog.hathitrust.org/Record/011444388>.